AH1 high dyna mic range amplifier specifications and information are subject to change without notice triquint semiconductor, inc ? phone +1 - 503 - 615 - 9000 ? fax: +1 - 503 - 615 - 8900 ? e - mail: info - sales@tqs.com ? web site: www.triquint.com page 1 of 5 may 2012 product features ? 250 C 4000 mhz ? +41 dbm oip3 ? 3 db noise figure ? 13.5 db gain ? +22 dbm p1db ? lead - free/green/ rohs - compliant sot - 89 package ? single +5 v supply ? mttf > 100 years applications ? mobile infrastructure ? catv / dbs ? w - lan / wi - bro / wimax ? rfid ? defense / homeland security ? fixed wireless product description the AH1 is a high dynamic range amplifier in a low - cost surface - mount package. the combination of low noise figure and high output ip3 at the same bia s point makes it ideal for receiver and transmitter applications. the device combines dependable performance with superb quality to maintain mttf values exceeding 100 years at mounting temperatures of +85 ? c. the AH1 is available in the environmentally - f riendly lead - free/green/rohs - compliant sot - 89 package. the broadband amplifier uses a high reliability gaas mmic technology and is targeted for applications where high linearity is required. it is well suited for various current and next generation wir eless technologies such as gprs, gsm, cdma, and w - cdma. in addition, the AH1 will work for other applications within the 250 to 4000 mhz frequency range such as fixed wireless, w - lan, and wibro. functional diagram function pin no. input 1 output / bias 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz 250 4000 test frequency mhz 800 gain db 12.4 13.5 input return loss db 8 output return loss db 15 output p1db dbm +21.7 output ip3 (2) dbm +37 +41 noise figure (3) db 3.0 operating current range ma 120 150 180 supply voltage v 5 1. test conditions unless otherwise noted: t = 25 oc, 50 ? system . 2. oip 3 measured with two tones at an output power of +5 dbm/tone separated by 10 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. 3. noise figure can be optimized by matching the input for optimal return loss. 4. parameters reflect performance in an AH1 - pcb application circuit, as shown on page 3. 5. measured with - 45 dbc acpr, is - 95 9 channels fwd. absolute maximum rating parameter rating storage temperature - 55 to +150 ? c supply voltage +6 v rf input power (continuous) +10 dbm junction temperature +160 ? c thermal resistance, rth 5 9 ? c / w junction temperature for >10 6 hours mttf operation of this device above any of these parameters may cause permanent damage. typical performance ( 4 ) parameter units typical frequency mhz 900 1900 2140 s21 db 14.2 12.2 12.0 s11 db - 21 - 14 - 21 s22 db - 14 - 13 - 11 output p1db dbm +21.7 +22 +22 output ip3 (2) dbm +42 +41 +40 is - 95 channel power (5) db +15.5 +16.5 noise figure db 3.2 3.3 3.3 supply voltage v 5 device current ma 150 ordering information part no. description a h1 - g high dynamic range amplifier (lead - free/green/rohs - compliant sot - 89 pkg) standard t/r size = 1 000 pieces on a 7 reel. not recommended for new designs recomme nded replacement part: tqp3m9007 rf in gnd rf out gnd 1 2 3 4 www.datasheet.net/ datasheet pdf - http://www..co.kr/
AH1 high dyna mic range amplifier specifications and information are subject to change without notice triquint semiconductor, inc ? phone +1 - 503 - 615 - 9000 ? fax: +1 - 503 - 615 - 8900 ? e - mail: info - sales@tqs.com ? web site: www.triquint.com page 2 of 5 may 2012 typical device data s - parameters (v ds = +5 v, i ds = 150 ma, t = 25 ? c, unmatched device in a 50 ohm system) input return loss ca n be improved with the appropriate input matching network shown later in this datasheet. s - parameters (v d = +5 v, i d = 150 ma, t = 25 ? c, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s 22 (ang) 50 - 2.65 - 29.52 17.80 164.25 - 24.29 45.18 - 8.25 - 39.80 250 - 7.97 - 44.15 15.28 158.50 - 21.31 6.75 - 19.01 - 65.37 500 - 8.57 - 60.61 14.91 147.54 - 21.11 - 3.83 - 25.15 - 69.25 750 - 8.47 - 80.72 14.60 134.66 - 21.11 - 10.90 - 29.26 - 84.69 1000 - 8.24 - 100. 99 14.22 121.38 - 21.21 - 17.00 - 30.76 - 115.12 1250 - 7.79 - 120.81 13.80 108.59 - 21.21 - 23.01 - 29.83 - 88.78 1500 - 7.18 - 138.15 13.27 96.13 - 21.41 - 28.54 - 29.30 - 94.19 1750 - 6.55 - 152.70 12.69 84.26 - 21.62 - 33.67 - 29.12 - 136.07 2000 - 6.03 - 164.30 12.11 73. 25 - 21.83 - 38.35 - 28.24 - 112.00 2250 - 5.69 - 173.54 11.57 62.88 - 21.99 - 42.48 - 26.58 - 97.44 2500 - 5.55 176.22 11.12 52.70 - 22.10 - 46.41 - 25.60 - 90.19 2750 - 5.68 166.67 10.76 42.57 - 22.16 - 50.57 - 26.12 - 87.80 3000 - 5.86 153.06 10.40 31.81 - 22.27 - 55.21 - 29.48 - 82.67 device s - parameters are available for download off of the website at: http://www.tqs.com oip3 load pull c ircles 900 mhz vswr=2 vswr=3 vswr=4 vswr=5 ip3=41 ip3=38 ip3=37 ip3=36 ip3=35 ip3=39 vswr=1.5 www.datasheet.net/ datasheet pdf - http://www..co.kr/
AH1 high dyna mic range amplifier specifications and information are subject to change without notice triquint semiconductor, inc ? phone +1 - 503 - 615 - 9000 ? fax: +1 - 503 - 615 - 8900 ? e - mail: info - sales@tqs.com ? web site: www.triquint.com page 3 of 5 may 2012 application circuit: 800 C 2500 mhz (AH1 - pcb) typical rf performance at 25 ? frequency mhz 900 190 0 2140 s21 C gain db 14.2 12.2 12.0 s11 C input r.l. db - 21 - 14 - 21 s22 C output r.l. db - 14 - 13 - 11 output p1db dbm +21.7 +22 +22 output ip3 (+5 dbm / tone, 10 mhz spacing) dbm +42 +41 +40 is - 95 channel power (@ - 45 dbc acpr, 9 channels fwd) dbm +15. 5 +16.5 noise figure db 3.2 3.3 3.3 device bias +5v @ 150ma circuit board material: .062 total thickness with a .014 fr - 4 top rf layer, 4 layers (other layers added for rigidity), 1 oz copper, 50 ? microstrip line details: width = .025. c= id= 56 pf c2 c= id= 56 pf c6 c= id= 56 pf c5 l= id= 12 nh c4 l= id= 5.6 nh c3 f0= el= z0= 0.9 ghz 15.2 deg 22 ohm net= id= "AH1" q1 vcc = +5 v all passive components are of size 0603 unless otherwise noted. configuration. component c1 is shown in the silkscreen but is not used for this gain and output ip3 vs. temperature frequency = 800, 801 mhz @ pout =5dbm 10 11 12 13 14 15 -40 -15 10 35 60 85 temperature ( o c) gain (db) 40 41 42 43 44 45 output ip3 (dbm) gain oip3 p1db and noise figure vs. temperature frequency = 800 mhz 19 20 21 22 23 -40 -15 10 35 60 85 temperature ( o c) p1db (dbm) 0 1 2 3 4 noise figure (db) p1db nf www.datasheet.net/ datasheet pdf - http://www..co.kr/
AH1 high dyna mic range amplifier specifications and information are subject to change without notice triquint semiconductor, inc ? phone +1 - 503 - 615 - 9000 ? fax: +1 - 503 - 615 - 8900 ? e - mail: info - sales@tqs.com ? web site: www.triquint.com page 4 of 5 may 2012 250 - 650 mhz reference design freq. mhz 250 450 650 gain db 14.8 14.5 13.8 s11 db - 10 - 36 - 11 s22 db - 19 - 17 - 13 p1db dbm +22 oip3 dbm +42 nf db 2.8 2.8 3.2 bias +5v @ 150ma 900 mhz reference design freq. mhz 800 900 1000 ain db 13 .7 13.7 13.6 s11 db - 13 - 16 - 18 s22 db - 13 - 14 - 15 p1db dbm +22 oip3 dbm +41 nf db 2.5 bias +5v @ 150ma 2350 mhz reference design freq. ghz 2.3 2.35 2.4 gain db 12.0 12.0 11.9 s11 db - 24 - 40 - 25 s22 db - 12 - 13 - 14 p1db dbm +22 oip3 dbm +41 nf db 3.7 bias +5v @ 150ma 3500 mhz reference design freq. ghz 3.3 3.5 3.8 gain db 9.8 9.9 9.5 s11 db - 10 - 18 - 14 s22 db - 16 - 17 - 16 p1db dbm +21.6 oip3 dbm +41 nf db 4.8 4.3 4.1 bias +5v @ 150ma 3 3.2 3.4 3.6 3.8 4 frequency (ghz) gain / return loss 6 7 8 9 10 11 gain (db) -25 -20 -15 -10 -5 0 s11, s22, (db) db(|s(1,1)|) (r) db(|s(2,2)|) (r) db(|s(2,1)|) (l) c=18 pf l=12 nh tlinp z0=80 ohm l=50 mil eeff=3.4 loss=0 f0=0 ghz c=1 pf c=18 pf net="AH1" +5v 0.2 0.3 0.4 0.5 0.6 0.7 frequency (ghz) gain / return loss 11 12 13 14 15 16 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (sb) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) c=1000 pf l=82 nh c=1000 pf l=15 nh net="AH1" +5v 0.7 0.8 0.9 1 1.1 frequency (ghz) gain / return loss 10 11 12 13 14 15 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) c=100 pf c=100 pf c=100 pf l=12 nh l=100 nh net="AH1" +5 v 2.1 2.2 2.3 2.4 2.5 2.6 frequency (ghz) gain / return loss 8 9 10 11 12 13 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (sb) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) c=56 pf l=22 nh c=1.2 pf tlinp z0=50 ohm l=250 mil eeff=3.4 loss=0 f0=0 ghz c=56 pf net="AH1" +5v www.datasheet.net/ datasheet pdf - http://www..co.kr/
AH1 high dyna mic range amplifier specifications and information are subject to change without notice triquint semiconductor, inc ? phone +1 - 503 - 615 - 9000 ? fax: +1 - 503 - 615 - 8900 ? e - mail: info - sales@tqs.com ? web site: www.triquint.com page 5 of 5 may 2012 a h1 - g (green / lead - free sot - 89 package) mechanical information this package is lead - free/green/rohs - compliant. it is compatible with both lead - free (maximum 260 ? c reflow temperature) and leaded (maximum 245 ? c reflow temperature) soldering processes. the plating material on th e leads is nipdau. outline drawing product marking the a h1 - g will be marked with an a h 1g designator. an alphanumeric lot code (xxxx - x) is also marked below the part designator on the top surface of the package. esd / msl information esd rating: class 1b value: passes ? 500v to <1000v test: human body model (hbm) standard: jedec standard jesd22 - a114 esd rating: class iv value: passes ? 1000v to <2000v test: charged device model (cdm) standard: jedec standard jesd22 - c101 msl r ating: level 1 at +260 ? c convection reflow standard: jedec standard j - std - 020 land pattern mounting config. notes 1. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135) diameter drill and have a final plated thru diameter of .25 mm (.010). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board material and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angles are in degrees. AH1g xxxx - x www.datasheet.net/ datasheet pdf - http://www..co.kr/
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